20N60A4 DATASHEET PDF

20N60A4 v, SMPS Series N-channel Igbts. The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs. Datasheet Transistor 20n60a4 – Download as PDF File .pdf) or read online. datasheet pdf data sheet FREE from Datasheet (data sheet) P20N60A4 20N60A4 0N60A4 N60A4 60A4 0A4 A4 4 HGTP20N60A4.

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All tail losses are included in the.

IGBTs can be handled datasheeh if the following basic precautions are taken: With proper handling and application procedures, however, IGBTs are currently being datazheet used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. When handling these devices. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means – for example, with a metallic wristband.

Other definitions are possible.

20N60A4 Datasheet catalog

The sum of device switching and conduction losses must not. Insulated Gate Bipolar Transistors are susceptible to. Prior to assembly into a circuit, all leads should be kept. If gate protection is required an external Zener is recommended. Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region.

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Gate Termination – The gates of these devices are essentially capacitors. Operating frequency information for a typical device. Home – IC Supply – Link.

Devices should never be inserted into or removed from. The information is based on measurements of a.

20N60A4 PDF Datasheet浏览和下载

Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter. Circuits that leave the gate. Device turn-off delay can establish an additional frequency.

Tips of soldering irons should be grounded. With proper handling and application. Operating Frequency Information Operating frequency information for a typical device Figure 3 is presented as a guide for estimating device performance for a specific application.

20N60A4 Datasheet(PDF) – Fairchild Semiconductor

Other typical frequency vs collector current I CE plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and Figure 3 is presented as a guide for estimating device. Circuits that leave the gate open-circuited or floating should be avoided.

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These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. The sum of device switching and conduction losses must not exceed P D.

20N60A40 DATASHEET

Devices should never be inserted into or removed from circuits with power on. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM.

When devices are removed 20j60a4 hand from their carriers. All tail losses are included in the calculation for E OFF ; i. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. The operating frequency plot Figure 3 of a typical.